document number: 89183 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 09-feb-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 dual high-voltage trench mos barrier schottky rectifier ultra low v f = 0.43 v at i f = 10 a V80100PW vishay general semiconductor new product features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in high frequency converters, switching power supplies, freewheeling diodes , or-ing diode, dc-to-dc converters and reverse battery protection. mechanical data case: to-3pw molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-fr ee and rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 40 a v rrm 100 v i fsm 450 a e as at l = 180 mh 700 mj v f at i f = 40 a 0.64 v t j max. 150 c to-3pw tmbs ? pin 2 case pin 1 pin 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol V80100PW unit maximum repetitive pe ak reverse voltage v rrm 100 v maximum average forward rectified current (fig. 1) per device i f(av) 80 a per diode 40 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on ra ted load per diode i fsm 450 a non-repetitive avalanche energy at t j = 25 c, l = 180 mh per diode e as 700 mj peak repetitive reverse current at t p = 2 s, 1 khz, t j = 38 c 2 c per diode i rrm 1.0 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 40 to + 150 c www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89183 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 09-feb-10 V80100PW vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - forward power loss characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit breakdown voltage i r = 1.0 ma t a = 25 c v br 100 (minimum) - v instantaneous forward voltage per diode i f = 10 a t a = 25 c v f (1) 0.49 - v i f = 20 a 0.59 - i f = 40 a 0.76 0.84 i f = 10 a t j = 125 c 0.43 - i f = 20 a 0.55 - i f = 40 a 0.64 0.76 reverse current per diode v r = 80 v t a = 25 c i r (2) 38 - a t a = 125 c 17 - ma v r = 100 v t a = 25 c 85 1000 a t a = 125 c 33 76 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol V80100PW unit typical thermal resistance per diode r jc 1.5 c/w per device 0.8 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-3pw V80100PW-m3/4w 4.5 4w 30/tube tube 50 60 80 40 20 0 025 50 75 100 125 150 175 ca s e temperature (c) average forwar d current (a) re s i s tive or inductive load mounted on s pecic heat s ink 0 0 4 8 20 24 28 32 36 4 8 12 28 32 36 40 44 48 average forward current (a) average power lo ss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 d = t p /t t p t 24 20 16 16 12 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 89183 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 09-feb-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 V80100PW vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per diode package outline dimensions in inches (millimeters) in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) 0 0.2 0.4 0.6 0.7 0.8 100 10 1 0.1 t a = 150 c t a = 125 c t a = 25 c 0.1 0.3 0.5 0.01 0.1 1 10 100 1000 20 30 40 50 60 70 80 90 100 percent of rated peak rever s e volta g e (%) in s tantaneou s rever s e current (ma) t a = 150 c t a = 125 c t a = 25 c 100 1000 10 000 0.1 1 10 100 junction cap acitance (p f) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p tran s ient thermal impedance (c/w) 10 1 0.1 0.1 1 10 100 0.01 junction to ca s e to- 3 pw 0.645 (16.38) 0.625 (15.87) 0.323 (8.20) 0.313 (7.95) 0.245 (6.23) 0.225 (5.72) 0.840 (21.34) 0.820 (20.83) 0.170 (4.32) ? 0.146 (3.71) ? 0.136 (3.45) 0.090 (2.29) 0.080 (2.03) 0.131 (3.33) 0.121 (3.07) 0.048 (1.22) 0.044 (1.12) 0.225 (5.72) 0.205 (5.21) 0.565 (14.35) 0.545 (13.84) 0.160 (4.06) 0.140 (3.56) 0.551 (14.00) 0.537 (13.64) 0.077 (1.96) 0.063 (1.60) 0.079 (2.01) 0.065 (1.65) 0.467 (11.86) 0.453 (11.51) 5 ref. both s ide s r0.155 (r3.94) r0.145 (r3.68) 3 ref. 30 ref. 10 typ. both s ide s 3 ref. 3 ref. 0.050 (1.27) 0.175 (4.45) 0.165 (4.19) 0.030 (0.75) 0.020 (0.50) 0.098 (2.50) 0.083 (2.12) www.datasheet.co.kr datasheet pdf - http://www..net/
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